Junctionless Accumulation Mode Ferroelectric FET (JAM-FE-FET) for High Frequency Digital and Analog Applications

Characterization of Tunnel Fet for Ultra Low Power Analog Applications

In modern portable devices, the supply voltage is decreased to reduce the power dissipation. However as the supply voltage is scaled down below 0.4V, the normal MOSFET devices cannot be used due to lower ION/ IOFF ratio which will reduce the static power dissipation. Hence for low power applications, Tunnel FET is used as alternatives due to their higher sub threshold swing, extremely low off s...

Can SG-FET Replace FET in Sleep Mode Circuits?

The Suspended Gate Field Effect Transistor (SG-FET) appears to have the potential to replace traditional FETs in sleep mode circuits, due to its abrupt switching enabled by electromechanical instability at a certain threshold voltage and its ultra low “off” current (Ioff). This paper presents a preliminary assessment of the SG-FET potential if utilized as sleep transistor in real applications, ...

SiGe heterostructures for FET applications

The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and III–V modulation-doped FETs. In this article the electrical properties of this semiconduc...

High-Speed DMOS FET Analog Switches and Switch Arrays

GR-FET application for high-frequency detection device

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz ...